PREPARATION AND PHOTOLUMINESCENCE PROPERTIES OF RF-SPUTTERED ZnO FILMS

Authors

  • N. T. T. Lieu Posts and Telecommunications Institute of Technology, Vietnam Posts and Telecommunications Group, Viet Nam
  • T. D. Canh Hanoi University of Natural Science, Viet Nam
  • N. X. Nghia Academy of Science and Technology, Viet Nam
  • Kontan Tarigan Hankuk University of Foreign Studies, Korea, Republic of

DOI:

https://doi.org/10.22441/ijimeam.v1i1.18887

Keywords:

ZnO thin films, Preparation, Optical properties

Abstract

ZnO/Si films were prepared by radio frequency (RF) magnetron sputtering at room temperature. By optimizing the heat treatment conditions, we obtained a good quality film annealed at 700 ºC for longer 60 minutes. This process was monitored carefully by Raman scattering spectroscopy, and X-ray diffraction. The photoluminescence study on this film revealed that only ultraviolet emissions due to donor-acceptor pair (DAP), neutral acceptor-bound exciton (AºX) and donor-bound exciton (DºX) were observed. The intensity and peak position of these emissions depend on the measurement temperature and excitation power density.

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Published

2015-12-01

How to Cite

1.
Lieu NTT, Canh TD, Nghia NX, Tarigan K. PREPARATION AND PHOTOLUMINESCENCE PROPERTIES OF RF-SPUTTERED ZnO FILMS. Int. J. Innov. Mech. Eng. Adv. Mater [Internet]. 2015 Dec. 1 [cited 2026 Jun. 3];1(1):32-8. Available from: https://publikasi.mercubuana.ac.id/index.php/ijimeam/article/view/18887

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Vol. 1 No. 1 (2015)

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Articles

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