PREPARATION AND PHOTOLUMINESCENCE PROPERTIES OF RF-SPUTTERED ZnO FILMS

N. T. T. Lieu, T. D. Canh, N. X. Nghia, Kontan Tarigan

Abstract


ZnO/Si films were prepared by radio frequency (RF) magnetron sputtering at room temperature. By optimizing the heat treatment conditions, we obtained a good quality film annealed at 700 ºC for longer 60 minutes. This process was monitored carefully by Raman scattering spectroscopy, and X-ray diffraction. The photoluminescence study on this film revealed that only ultraviolet emissions due to donor-acceptor pair (DAP), neutral acceptor-bound exciton (AºX) and donor-bound exciton (DºX) were observed. The intensity and peak position of these emissions depend on the measurement temperature and excitation power density.

Keywords


ZnO thin films; Preparation; Optical properties

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DOI: http://dx.doi.org/10.22441/ijimeam.v1i1.18887

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